dmp 1200 uf r4 document number: d s 36557 rev. 2 - 2 1 of 6 www.diodes.com october 2014 ? diodes incorporated dmp 1200 uf r4 new product p - channel enhancement mode mosfet product summary v (br)dss r ds(on) i d t a = + 25c - 12 v 100m ? @ v gs = - 4 .5 v - 2 a 160m ? @ v gs = - 2.5 v - 1 a 200m ? @ v gs = - 1.8 v - 0.5a 38 0m ? @ v gs = - 1.5 v - 0.2 a description and applications this new gener ation mosfet is designed to minimize the on - state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. ? power management functions ? backlighting ? load switch features and be nefits ? low on - resistance ? esd protected gate ? low input/output leakage ? fast switching speed ? totally lead - free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) mechanical data ? case: x2 - dfn1010 - 3 ? case material: molde d plastic, green molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal connections: see diagram ? terminals: finish - nipdau a nnealed over copper l eadframe . solderable per m il - std - 202, method 208 ? weight: 0.0015 grams (approximate) ordering information (note 4 ) part number case packaging dmp12 0 0 uf r 4 - 7 x2 - dfn1010 - 3 3 000/tape & reel notes: 1 . no purposely ad ded lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http//www.diodes.com/products/packages.html . marking information date code key year 2011 2012 2013 2014 2015 2016 2017 code y z a b c d e month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d x2 - dfn1010 - 3 12 = product type marking code ym = date code marking y = year (ex: y = 2011) m = month (ex: 9 = september) 12 ym pin - out top view equivalent circuit bottom view esd protected
dmp 1200 uf r4 document number: d s 36557 rev. 2 - 2 2 of 6 www.diodes.com october 2014 ? diodes incorporated dmp 1200 uf r4 new product maximum ratings ( @t a = + 25c unless otherwise specified .) characteristic symbol value units drain - source voltage v dss - 12 v gate - source voltage v gss 8 v drain current (note 6 ) steady t a = + 25 ? d 2 a thermal characteristics characteristic symbol value units total power dissipation (note 5 ) p d 0.4 8 w thermal resistance, junction to ambient @t a = + 25c (note 5 ) r ? ja 266 c/w total power dissipation (note 6 ) p d 1.26 w thermal resistan ce, junction to ambient @t a = + 25c (note 6 ) r ? ja 102 c/w operating and storage temperature range t j, t stg - 55 to +150 c electrical characteristics ( @t a = + 25c unless otherwise specified .) characteristic symbol min typ max unit test condition off characteristics (note 7 ) drain - source breakdown voltage bv dss - 12 ? ? gs = 0v, i d = - 250 a zero gate voltage drain current i dss ? ? ds = - 9.6 v, v gs = 0v gate - source leakage i gss ? ? ? gs = ? ds = 0v on characteristics (note 7 ) gat e threshold voltage v gs(th) - 0. 35 ? ds = v gs , i d = - 250 a static drain - source on - resistance r ds (on) ? ? ? ? gs = - 4. 5 v, i d = - 2 a v gs = - 2.5v, i d = - 1a v gs = - 1 . 8 v, i d = - 0.5a v gs = - 1 .5v, i d = - 0.2a forward transfer admittance |y fs | 4 0 ? ? ds = - 5v, i d = - 0.5 a diode forward voltage v sd ? ? gs = 0v, i s = - 0.2 a dynamic characteristics (note 8 ) input capacitance c iss ? ? ds = - 5 v, v gs = 0v, f = 1.0mhz output capacitance c oss ? ? rss ? ? g ? ? ? ? gs = - 4 .5 v, v ds = - 5 v, i d = - 2 a gate - source charge q gs ? ? gd ? ? d(on) ? ? dd = - 5 v , v gen = - 4 .5 v , r gen = 6 r ? ? d(off) ? ? ? ? f ? ? ? ? notes: 5 . device mounted on fr - 4 substrate pc board, 2oz copper, with minimum recommended pad layout . 6. device mounted on 1 x 1 fr - 4 pcb with h igh coverage 2oz. copper, single sided. 7 . short duration pulse test used to minimize self - heating effect. 8. guaranteed by design. not subject to production testing .
dmp 1200 uf r4 document number: d s 36557 rev. 2 - 2 3 of 6 www.diodes.com october 2014 ? diodes incorporated dmp 1200 uf r4 new product v drain -source voltage (v) ds , figure 1 typical output characteristics i , d r a i n c u r r e n t ( a ) d 0.0 3.0 6.0 9.0 v = -4.5v gs 12.0 15.0 0 0.5 1 1.5 2 2.5 3 v = -4.0v gs v = -8.0v gs v = -3.0v gs v = -1.8v gs v = -1.5v gs v = -1.2v gs v = -1.0v gs i drain source current (a) d , figure 5 typical on-resistance vs. drain current and temperature r d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) , 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0 1 2 3 4 5 t = 125c a 6 7 8 9 10 v = -4.5v gs t = 85c a t = 150c a t = 25c a t = -55c a ? ? i , drain source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage r d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) , v = -1.5v gs 0 0.05 0.1 0.15 0.2 0.25 0.3 0 v = -2.5v gs 3 6 9 12 15 v = -1.8v gs v = -4.5v gs v gate-source voltage (v) gs , figure 2 typical transfer characteristics i , d r a i n c u r r e n t ( a ) d 0 1 2 3 4 5 6 7 8 9 10 0 0.5 v = -5.0v ds 1 1.5 2 2.5 t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v , gate-source voltage (v) gs figure 4 typical transfer characteristic r d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) , 0 0.1 0.2 0.3 0.4 0.5 0 1 2 3 4 5 6 7 8 i = -1.0a d i = -500ma d i = -2.0a d t junction temperature ( c) j , ? figure 6 on-resistance variation with temperature r d r a i n - s o u r c e d s ( o n ) , o n - r e s i s t a n c e ( n o r m a l i z e d ) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 25 50 75 100 125 150 v = -2.5v gs i = -2.0a d v = -1.8v gs i = -1.0a d
dmp 1200 uf r4 document number: d s 36557 rev. 2 - 2 4 of 6 www.diodes.com october 2014 ? diodes incorporated dmp 1200 uf r4 new product v , drain-source voltage (v) ds figure 12 soa, safe operation area i , d r a i n c u r r e n t ( a ) d 0.01 0.1 1 10 100 0.1 1 10 100 r ds(on) limited dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w t = 150c j (m ax ) t = 25c a v = 4.5v gs single pulse dut on 1 * mrp board t , junction temperature (c) j figure 7 on-resistance variation with temperature r , d r a i n - s o u r c e d s ( o n ) o n - r e s i s t a n c e ( ) 0 0.05 0.1 0.15 0.2 -50 -25 0 25 50 75 100 125 150 v = -1.8v gs i = -1.0a d v = -2.5v gs i = -2.0a d t , junction temperature ( c) j ? figure 8 gate threshold variation vs. ambient temperature v g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) , 0 0.2 0.4 0.6 0.8 1 -50 -25 0 25 50 75 100 125 150 i = -250a d i = -1ma d c , j u n c t i o n c a p a c i t a n c e ( p f ) t v , drain-source voltage (v) ds figure 10 typical junction capacitance c oss 10 100 1000 0 2 4 6 8 10 12 c rss c iss f = 1mhz v , source-drain voltage (v) sd figure 9 diode forward voltage vs. current i , s o u r c e c u r r e n t ( a ) s 0 1 2 3 4 5 6 7 8 9 10 0 0.3 0.6 0.9 1.2 1.5 t = 25c a t = 85c a t = -55c a t = 125c a t = 150c a q total gate charge (nc) g , figure 11 gate-charge characteristics v , g a t e - s o u r c e v o l t a g e ( v ) g s 0 2 4 6 8 0 1 2 3 4 5 6 7 8 9 10 v = -5v ds i = -2.0a d
dmp 1200 uf r4 document number: d s 36557 rev. 2 - 2 5 of 6 www.diodes.com october 2014 ? diodes incorporated dmp 1200 uf r4 new product pac kage outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. x2 - dfn1010 - 3 dim min max typ a - 0.40 0.39 a1 0.00 0.05 0.02 a3 - - 0.13 b 0.18 0.28 0.23 d 0.95 1.05 1.00 d2 0.70 0.90 0.80 e 0.95 1.05 1.00 e2 0.36 0.56 0.46 e - - 0.50 k - - 0.20 l 0.195 0.295 0.245 all dimensions in mm x2 - dfn1010 - 3 di mensions value c 0.500 g 0.150 x 0.330 x1 0.900 y 0.445 y1 0.505 y2 0.200 all dimensions in mm a a1 seating plane d e b e l (pin #1 id) k d2 e2 a3 y1 x1 g x c y x y2 t1, pulse duration times (sec) figure 13 transient thermal resistance r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e d = 0.005 d = 0.01 d = 0.05 d = 0.7 single pulse d = 0.1 d = 0.5 d = 0.3 d = 0.02 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 d = 0.9 rthja(t)=r(t) * rthja rthja=262c/w duty cycle, d=t1 / t2
dmp 1200 uf r4 document number: d s 36557 rev. 2 - 2 6 of 6 www.diodes.com october 2014 ? diodes incorporated dmp 1200 uf r4 new product important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of a ny jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated do es not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages . diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized applicati on, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintend ed or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or fo reign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes inco rporated products are specifically not authorized for use as critical components in life support devices or systems without t he express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or sy stems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instruction s for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safe ty - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes in corporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 4 , diodes incorporated www.diodes.com
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